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Saturday, May 9, 2020 | History

5 edition of Positron annihilation in semiconductors found in the catalog.

Positron annihilation in semiconductors

defect studies

by R. Krause-Rehberg

  • 82 Want to read
  • 21 Currently reading

Published by Springer in Berlin, New York .
Written in English

    Subjects:
  • Semiconductors -- Defects,
  • Positron annihilation

  • Edition Notes

    Includes bibliographical references (p. [353]-374) and index.

    StatementR. Krause-Rehberg, H.S. Leipner.
    SeriesSpringer series in solid-state sciences,, 127
    ContributionsLeipner, H. S. 1958-
    Classifications
    LC ClassificationsQC611.6.D4 K7 1999
    The Physical Object
    Paginationxv, 378 p. :
    Number of Pages378
    ID Numbers
    Open LibraryOL389432M
    ISBN 103540643710
    LC Control Number98053844

    Positron annihilotion in II-VI semiconductors 1 positron annihilation rates, neglecting the accumulation of the average electron density is compensated by a stronger short-range enhancement of the electron density [26].A more severe approximation that we have made is that the relaxation of the atoms surrounding the vacancy defects is not taken into by: The motion of the annihilating electron-positron pair causes a Doppler shift in the annihilation radiation (Fig. 1) (5)δE=12cpL, where p L is the longitudinal momentum component of the pair in the direction of the annihilation photon emission. This causes the broadening of the keV annihilation line (Fig.

    In summary, PAS gives microscopic information about vacancy defects in semiconductors in the concentration range 10 15 19 cm The positron lifetime is the fingerprint of the open volume associated with a defect, and it can be used to identify mono- and divacancies and larger vacancy clusters. Doppler broadening of the annihilation radiation, on the other hand, can be Author: Jonatan Slotte, Ilja Makkonen, Filip Tuomisto. In summary, neutral and negative vacancy-type defects, as well as negative ions, are the dominant positron traps in semiconductors. Temperature-dependent lifetime measurements may distinguish between both defect types. However, it should be noted that the main advantage of positron annihilation is the sensitive detection of open-volume defects.

    This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density . Prediction of positron-annihilation parameters for vacancy-type defects in ternary alloy semiconductors by data-scientific approach. Shoji Ishibashi 1,2, Hiori Kino 2, Akira Uedono 3, Takashi Miyake 1,2 and Kiyoyuki Terakura 2. Published under licence by IOP Publishing Ltd Journal of Physics: Conference Series, Volume , Number 1Author: Shoji Ishibashi, Hiori Kino, Akira Uedono, Takashi Miyake, Kiyoyuki Terakura.


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Positron annihilation in semiconductors by R. Krause-Rehberg Download PDF EPUB FB2

The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g.

vacancies, impurity-vacancy complexes and. POSITRON ANNIHILATION IN SEMICONDUCTORS on *FREE* shipping on qualifying offers. POSITRON ANNIHILATION IN SEMICONDUCTORS: : Books Skip to main content5/5(1).

Positron annihilation has become one of the most important techniques for the investigation of vacancy-like defects. Positrons may be captured in lattice imperfections and the annihilation signal then contains specific information on the type and the concentration of these defects.5/5(1).

The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g.

vacancies, impurity-vacancy complexes and dislocations, is described. This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.

Positron-Annihilation-Induced Auger Electron Spectroscopy 41 Low-Energy Positron Diffraction 43 Summary 45 3 Basics of Positron Annihilation in Semiconductors 49 Interaction of Positrons with Solids 49 Backscattering 49 Channeling 51 Thermalization COMP Centre of Excellence, Helsinki Institute of Physics and Department of Applied Physics, Aalto University School of Science, Espoo, Finland.

(published 14 November ) Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects.

in by: Positron annihilation spectroscopy has been widely used for studying defects in semiconductors since the early 80’s, while the first reports dealing with radia. • positron wave-function can be localized in the attractive potential of a defect. • annihilation parameters change in the localized state.

• e.g. positron lifetime increases in a vacancy. • lifetime is measured as time difference between appearance of File Size: 8MB. ICPA (The XIVth International Conference on Positron Annihilation, Hamilton / Canada, July 23rd and July 28th ) SLOPOS ( International Workshop on Slow Positron Beam Techniques for Solids and Surfaces) Univ.

of Doha, Qatar, March PSSD (Positron Studies of Semiconductor Defects); Coeur d’Alene/Pullman, USA, Peculiarities of Positron Annihilation in semiconductors 7.

Defect studies in semiconductors – 11 Examples 8. Conclusions 9. Literature. Positron generation: isotope sources Positrons are obtained for laboratory setups usually by the File Size: 8MB. Positron annihilation spectroscopy is an experimental technique that allows the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them.

This chapter gives an introduction to the principles of the positron annihilation techniques and then discusses the physics of some interesting observations on vacancy defects related to Cited by: 6.

It is found that the positron density is maximum in the open interstices and is excluded not only, as usual, from the ion cores but also to a considerable degree from the valence bonds. Electron‐positron momentum densities are calculated for the (–) plane.

The results are used to analyze the positron effect in narrow‐gap semiconductors. Books & CD ROMs Show all 1 results.

ADD ALL 1 Results TO MARKED ITEMS Hardcover Usually dispatched within 3 to 5 business days. Positron Annihilation in Semiconductors Defect Studies. Series: Springer Series in Solid-State Sciences, Vol. Krause-Rehberg, Reinhard, Leipner, Hartmut S. Price from  Positron Annihilation focuses on the process of positron annihilation in different environments.

Partitioned into two parts with 42 chapters, the book contains the contributions of authors who have done research on the annihilation of positrons, which brought about valuable information on the properties of Edition: 1.

Positron Annihilation in Semiconductors的话题 (全部 条) 什么是话题 无论是一部作品、一个人,还是一件事,都往往可以衍生出许多不同的话题。. Positron decay curves in various semiconducting elements and in the semimetals As, Sb, and Bi have been measured with a delayed coincidence system with nsec full width at half-maximum prompt time resolution.

The annihilation in ideal, pure semiconductors is found to be characterized by a simple exponential decay: The second low-intensity decay component may. This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation.

It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations. Free delivery on online orders of $ or. Description: The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation.

A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. 6 Positron annihilation spectroscopy, experimental and theoretical aspects + Show details-Hide details p.

– (25) In summary, PAS gives microscopic information about vacancy defects in semiconductors in the concentration range 10 15 19 cm. Positron annihilation spectroscopy has been widely used for studying defects in semiconductors since the early s, while the first reports dealing with radiation damage in silicon and germanium.Positron annihilation techniques are useful for revealing significant differences in microstructure sites of plastic deformation, fatigue, and irradiation damage compared with the as-received sample of a low alloy steel or stainless steel (Rogerson et al.Acousta et al.

).Positron annihilation spectroscopy is an experimental technique that allows the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them.

This chapter gives an introduction to the principles of the positron annihilation techniques and then discusses the physics of some interesting Cited by: 6.